Stair Climbing Power Lab Answer Keys
Posted By Admin @ Mar 02, 2022
Posted By Admin @ Mar 02, 2022
Extreme Ultraviolet (EUV) Lithography
Basic Operation Principles
Feature about tool
Purpose of tool
Techniques and Challenges face
Advantages and Disadvantages
Introduction to Lithography
Lithography was an outgrowth where the arbitrary pawprints would accurately repeatedly manufactured in a specialized form of material on a specific substance by adding a chemical content through variations. Basically, the pattern of the process is then forward to another functional layer from a traditional thesaurus or through the lift-off process. Lithography provides the reason for ever-decreasing dimensions or semiconductor devices; that’s why there is the main purpose of nanotechnology is revolution. Prevalence coming from sensitive resist textile to energetic photons or particles is exposed. This is the resist-based lithography.
There are many different ways of processing lithography that are come out in the semiconductor industries are given below:
Fig 1. Lithography process
• E-beam\ ion-beam\Neutral atomic beam lithography.
• X-ray lithography
• Photolithography (optical, UV, EUV)
• Step growth
• Interference lithography
• Soft lithography
• Scanning probe (voltage pulse, CVD, Local electrodeposition, Dip-pen)
• Nanoimprint (Shadow mask)
• Nano templates (Diblock copolymer, sphere, nanochannel glass, Alumina remembrance, Nuclear-track etched membrane.
Describing after all above process I choose the Extreme Ultra-Violet method that is derived from the Nanolithography tool.
Extreme Ultra Violet
EUV (Extreme Ultra Violet) Lithography used the EUV light for an amazingly short wavelength of 14 nm. Its presentation of a high circuit with half-pitch design under the 20nm that may not be uncovered with the customary optical lense of lithography using an arf excimer laser is licensed and legally proved by the authorized organization. Common sense utilize requires placing an assortment of advancement components, including the optics, veils, photoresists, light source, and lithography devices. (Wagner, 2010)
Between these elements of technologies, the major challenge is the technology has to build the most strong EUV beam of the shortest wavelength of 14nm. This EUV beam came out from the high-density and high-temperature plasma. Two methods are used for the making of plasma. One is the laser-produced plasma, and the other is Discharge-produced plasma. The laser-produced plasma can be made through compacting through an intense laser beam onto a specific material, and discharge-produced plasma can be obtained from a pulse high-current discharge between the electrodes and the content of a particular atmosphere. The EUV beam explicitly from the plasma, which is collected by a condensing mirror, which passed through a specific point known as intermediate focus (IF) and illuminates from a reflection type mask when it is reshaped by the illumination optics. The EUV beam is reflected by a typical cover that is exposed by the projection optics to make a pattern on photoresist, which is coated on the wafer surface. (see figure 2).
Nowadays, EUV lithography revolution, including a light source work, is still in progress; it depends upon to put it into a technical use inside for a long time of period. For high volume creation of 200 w or more, yield control is required. Use yield intensity of approx; for production, an EUV light hotspot can be presented. 10 W was still looked like a low dimension. To generate high-volume for the EUV hotspot, an extraordinary upgradation of yielding and powering unwavering high quality is required that gives the permit relentless task without supporting for a while. (Brillouet, 2006)